Chemical Mechanical Planarization (CMP) is an essential process for device integration and planarization in a semiconductor manufacturing process. The most critical function in the CMP process, is to predict and cover the geometrical characteristics of various sizes and densities, of patterned wafers for local and global planarization. To achieve the wafer-level and die-level planarization, it is necessary to understand the contact mechanism between the CMP pads and the macro-scale patterns. In the macro-scale pattern, pad deformation is divided into two layers: an asperity layer and a bulk pad layer. Through bulk pad deformation, asperity contact distribution within the pattern is predicted. In this paper, the distribution of asperity contact according to the pattern geometrical characteristics was analyzed, through large-area real contact area (RCA) measurement. Bulk pad deformation was predicted by analyzing RCA distribution according to pattern geometry such as pattern size and density, pattern shape and step height according to the polishing time, and applied pressure. Additionally, through the distribution of the contact area and the number of contact points, the rounding phenomenon and planarization characteristics in the pattern CMP were predicted.