Chemical mechanical polishing achieves surface planarity through combined mechanical and chemical means. The role of the chemical reaction is very important in a metal CMP like aluminum. The slurry used in aluminum CMP typically consists of oxidizers, a chelating agent, corrosion inhibitors, and abrasives. This study investigates the effect of oxalic acid as a chelating agent for aluminum CMP with H2O2. To study the chemical effect of the chelating agent, the two methods of a polishing experiment and an electrochemical analysis were used. Lastly, it was confirmed that the optimum concentration of oxalic acid significantly improved the removal rate and surface roughness of aluminum.