This paper shows results of research on transparent electrode manufacturing processes using thermal imprinting and IPL technique. By using an IPL process instead of the existing heat sintering process, the sheet resistance value was reduced to about 1/ 10. Additionally, sintering time could be reduced from 1 hour to 1 ms. As a result of measuring the transmittance to determine the excellence of the transparent electrode produced in this way, it was confirmed that it had a high transmittance of 94.4% compared to the substrate with a very high bending stability compared to the existing ITO transparent electrode. These results show that the transparent electrode manufacturing method proposed in this study is very useful.

Equipment used in the semiconductor manufacturing process generally have a flow rate control system for each nozzle to regulate the flow rate of chemical solution fed to the wafer. In existing flow rate control systems, flow rate overshoots occur because of excess pressure and the control rates of the overshoots are less because additional operation time is required for the electric valves. In this study, to address the shortcomings of existing flow rate control systems, we proposed a method to improve the speed of flow rate control by introducing a constant pressure valve. The constant pressure valve controls the flow path via gas pressure, thereby facilitating prompt control and efficiently improving the flow rate overshoot caused by the pressure overshoot. To improve the control speed and control stability of the constant pressure valve, a three-step automatic control speed application function was developed, and the measured valve, control amount mapping function, and pre-open function were defined to reduce the initial control speed. The experimental results showed a measurement precision within 1% of the target flow rate and stable control performance as well as control speed reduction from 3 seconds in existing systems to 2 seconds or less for the proposed system.