ZrO₂ film is widely used for high-k applications and also has good mechanical properties. This paper covers the study of the properties of ZrO₂ film deposited by atomic layer deposition (ALD) using TEMA Zr and water in the temperature range of 110 to 250^oC for potential application in flexible-device fabrication. At a low deposition temperature, ALD ZrO₂ films showed a uniform growth rate of ~1 Å per cycle, good uniformity, partial crystallinity, and smooth surface. ZrO₂ can also be deposited on the trench structure with a high aspect ratio (~1:50), but conformality needs to be improved for practical applications.