Silicon nitride/cobalt tungsten boride (SiN/CoWB) passivation layer improves mass transport rate at copper thin film layers of semiconductor wafers after chemical mechanical polishing process. This study evaluates mass transport at the interface between copper and passivation layers by stress relaxation method, followed by deduction of interface diffusivity via a kinetic model. For comparison, SiN/CoWB, SiN, silicon carbon nitride (SiCN) and silicon carbide (SiC) passivation layers are introduced. A thin layer of SiN/CoWB demonstrates an outstanding performance as diffusion retarding material, especially at high temperature. The order of stress relaxation in terms of passivation layers is SiN/CoWB < SiN < SiCN < SiC, implying the order of mass transport at the interface. Using the kinetic model, the diffusivities and activation energies regarding passivation layers are calculated and reveal a good agreement with experimental results.