Most of the consumables used in the CMP (Chemical Mechanical Planarization) process are discarded because it is difficult to reuse them. Slurry accounts for most of the consumables, so research is being conducted to reduce the amount of slurry used. A previous study explains that when the same amount of slurry is injected, the material removal rate is improved when the slurry is injected wide and thin instead of the tube nozzle, which is the conventional slurry injection method. However, there was no change in the injection method due to the problems of the injection method suggested in previous studies and the lack of follow-up studies. Thus, in this paper, an injection method through an ultrasonic spray nozzle is proposed to improve the problems of the injection method proposed in previous studies. Additionally, it is intended to calculate the slurry film thickness according to the spraying range and to explain the effect of the film thickness on the material removal rate.

Chemical Mechanical Planarization (CMP) is an essential process for device integration and planarization in a semiconductor manufacturing process. The most critical function in the CMP process, is to predict and cover the geometrical characteristics of various sizes and densities, of patterned wafers for local and global planarization. To achieve the wafer-level and die-level planarization, it is necessary to understand the contact mechanism between the CMP pads and the macro-scale patterns. In the macro-scale pattern, pad deformation is divided into two layers: an asperity layer and a bulk pad layer. Through bulk pad deformation, asperity contact distribution within the pattern is predicted. In this paper, the distribution of asperity contact according to the pattern geometrical characteristics was analyzed, through large-area real contact area (RCA) measurement. Bulk pad deformation was predicted by analyzing RCA distribution according to pattern geometry such as pattern size and density, pattern shape and step height according to the polishing time, and applied pressure. Additionally, through the distribution of the contact area and the number of contact points, the rounding phenomenon and planarization characteristics in the pattern CMP were predicted.