Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping. A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 ㎜). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 ㎸. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 ㎃/㎠ and the spread of ion energy was 1.6 % for the extraction voltage.
