As the digitization of the manufacturing process is accelerating, various data-driven approaches using machine learning are being developed in chemical mechanical polishing (CMP). For a more accurate prediction in contact-based CMP, it is necessary to consider the real-time changing pad surface roughness during polishing. Changes in pad surface roughness result in non-uniformity of the real contact pressure and friction applied to the wafer, which are the main causes of material removal rate variation. In this paper, we predicted the material removal rate based on pressure and surface roughness using a deep neural network (DNN). Reduced peak height (Rpk) and real contact area (RCA) were chosen as the key parameters indicative of the surface roughness of the pad, and 220 data were collected along with the process pressure. The collected data were normalized and separated in a 3 : 1 : 1 ratio to improve the predictive performance of the DNN model. The hyperparameters of the DNN model were optimized through random search techniques and 5 cross-validations. The optimized DNN model predicted the material removal rate with high accuracy in ex-situ CMP. This study is expected to be utilized in data-driven machine learning decision making for cyber-physical CMP systems in the future.
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Precision Engineering and Intelligent Technologies for Predictable CMP Somin Shin, Hyun Jun Ryu, Sanha Kim, Haedo Jeong, Hyunseop Lee International Journal of Precision Engineering and Manufacturing.2025; 26(9): 2121. CrossRef
Prediction of Normalized Material Removal Rate Profile Based on Deep Neural Network in Five-Zone Carrier Head CMP System Yonsang Cho, Myeongjun Kim, Munyoung Hong, Joocheol Han, Hong Jin Kim, Hyunki Kim, Hyunseop Lee International Journal of Precision Engineering and Manufacturing-Green Technology.2025; 12(3): 869. CrossRef
Finite element analysis model was fabricated to confirm stress concentration phenomenon occurring in the wafer edge region in the CMP process, and it was confirmed if it corresponds to the measurement result of the actual pressure sensor. First, contact stress distribution at the edge of the wafer was calculated by the finite element analysis model in which material properties and boundary conditions were set up. As a result, an engineering contact stress distribution profile was obtained. Next, the pressure generated in the edge region of the wafer was measured using a pressure sensor that detects resistance change of the polymer. To compare with the result of the finite element analysis, the non-dimensional sensor signal unit was converted into the pressure unit, and correlation between the analysis and measurement results was obtained. As a result, the finite element analysis result, the actual pressure measurement, and the trend of the results were more than 90%. The results show that the finite element analysis model produced and modified in this study is consistent with the actual behavior trend of the components.
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Variation of Pad Temperature Distribution by Slurry Supply Conditions Jinuk Choi, Seonho Jeong, Kyeongwoo Jeong, Haedo Jeong Journal of the Korean Society for Precision Engineering.2020; 37(12): 873. CrossRef
Chemical mechanical polishing achieves surface planarity through combined mechanical and chemical means. The role of the chemical reaction is very important in a metal CMP like aluminum. The slurry used in aluminum CMP typically consists of oxidizers, a chelating agent, corrosion inhibitors, and abrasives. This study investigates the effect of oxalic acid as a chelating agent for aluminum CMP with H2O2. To study the chemical effect of the chelating agent, the two methods of a polishing experiment and an electrochemical analysis were used. Lastly, it was confirmed that the optimum concentration of oxalic acid significantly improved the removal rate and surface roughness of aluminum.
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Hybrid CMP Slurry Supply System Using Ionization and Atomization Hoseong Jo, Da Sol Lee, Seon Ho Jeong, Hyun Seop Lee, Hae Do Jeong Applied Sciences.2021; 11(5): 2217. CrossRef
Improvement of Interface Diffusion in Cu thin films using SiN/CoWB Passivation Layer Jung Woong Kim, Sean Jhin Yoon, Hyun Chan Kim, Youngmin Yun, Jaehwan Kim Journal of the Korean Society for Precision Engineering.2018; 35(12): 1163. CrossRef
Improvement of Interface Diffusion in Cu thin films using SiN/CoWB Passivation Layer Jung Woong Kim, Sean Jhin Yoon, Hyun Chan Kim, Youngmin Yun, Jaehwan Kim Journal of the Korean Society for Precision Engineering.2018; 35(12): 1163. CrossRef
The chemical mechanical planarization (CMP) process combines the chemical effect of slurry with the mechanical effect of abrasive (slurry)-wafer-pads The slurry delivery system has a notable effect on polishing results, because the slurry distribution is changed by the supply method. Thus, the investigation of slurry pumps and nozzles with regard to the slurry delivery system becomes important. This paper investigated the effect of a centrifugal slurry pump on a spray nozzle system in terms of uniform slurry supply under a rotating copper (Cu) wafer, based on experimental results and computational fluid dynamics (CFD). In conventional tools, the slurry is unevenly and discontinuously supplied to the pad, due to a pulsed flow caused by the peristaltic pump and distributed in a narrow area by the tube nozzle. Adopting the proposed slurry delivery system provides a higher uniformity and lowered shear stress than usual methods. Therefore, the newly developed slurry delivery system can improve the CMP performance.
For reaction injection molding (RIM) polyurethane was mixed in the mixing head by impingement mixing, injected into the mold, and cured quickly, as soon as the mold is filled. The shape of the nozzle in the mixing head is critical to improve the quality of polyurethane. To achieve homogeneous mixing, an intensive turbulence energy in the mixing nozzle is essential. In this study, a mixing nozzle for RIM was designed, and mixing efficiency was investigated based on experiment. Experiments were conducted with different combinations of nozzle tips and exit diameter to measure the mixing efficiency by measuring jet force and investigating mixing image with high speed camera. Jet force increased gradually and reaches steady state conditions. The jet force depended on shape of nozzle tip and outlet sizes. These results suggest that optimized nozzle configurations are necessary for high efficiency mixing with RIM.
Cadmium telluride (CdTe) is being developed for thin film of the X-Ray detector recently. But a rough surface of the CdTe should be improved for resolution and signal speed. This paper shows the study on the improvement of surface roughness and removal rate by applying Chemical Mechanical Polishing. The conventional potassium hydroxide (KOH) based colloidal silica slurry could not realize a mirror surface without physical defects, resulting in low material removal rate and many scratches on surface. In order to enhance chemical reaction such as form oxidized layer on the surface of cadmium telluride, we used hydrogen peroxide (H₂O₂) as an oxidizer. Consequently, in case of 3 wt% concentration of hydrogen peroxide, the highest MRR (938 nm/min) and the lowest surface roughness (R<SUB>p-v</SUB> = 10.69 nm, Ra<SUB></SUB> = 0.8 nm) could be obtained. EDS was also used to confirm the generated oxide of cadmium telluride surface.
There are several indicators to represent characteristics of chemical mechanical planarization (CMP) such as material removal rate (MRR), surface quality and removal uniformity on a wafer surface. Especially, the removal uniformity on the wafer edge is one of the most important issues since it gives a significant impact on the yield of chip production on a wafer. Non-uniform removal rate at the wafer edge (edge effect) is mainly induced by a non-uniform pressure from non-uniform pad curvature during CMP process, resulting in edge exclusion which means the region that cannot be made to a chip. For this reason, authors tried to minimize the edge exclusion by using an edge profile control (EPC) ring. The EPC ring is equipped on the polishing head with the wafer to protect a wafer from the edge effect. Experimental results showed that the EPC ring could dramatically minimize the edge exclusion of the wafer. This study shows a possibility to improve the yield of chip production without special design changes of the CMP equipment.
Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions. Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant(0.1-0.3㎛/hr) as compared with that of N-polar surface. Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process. MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes. Diamond abrasives of size ranging from 30㎚ to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness (Ra 0.15㎚) and scratch-free surface were obtained by diamond slurry of 30㎚ in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.
This paper is focused on the development of the flexible electrode for disc-type polymer actuators using Segmented Polyurethane(SPU). This paper consists of two parts. The one is about the mechanical property such as elastic modulus. these parameters mainly affect behaviors of polymer actuators and the other is about the electro-chemical property such as the surface resistance of the composite electrode affects the strength of electrostatic force, results in the deformation of polymer actuators. The Young's modulus was measured by UTM. As result, by increasing the modulus of a body of polymer actuators, the maximum displacement of polymer actuators are decreased. The surface resistance of the electrode was measured by 4 point probe system. Compared with the conductive silver grease, the displacement of polymer actuators using carbon black(CB) composite electrodes is comparably small but CB composite electrode should be the practical approach for the improvement of the performance of all-solid actuators, compared with another types of electrode materials.
Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.
Ultra precision grinding technology has been developed from the refinement of the abrasive, the development of high stiffness equipment and grinding skill. The conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing has been changed to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Furthermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focuses on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equipment. Wafer tilting is applied to avoid non-uniform material removal. Through the geometric analysis of wafer grinding process, the profile of the ground wafer is predicted by the development of profile simulator.
SL(Stereolithography) part is made by piling up thin layers which causes the stair stepping effect at the surface of SL parts. The effect brings about excessive surface roughness and cuts down the merits of using SL part. Hence, additional post-machining finishing such as traditional grinding is required. But the traditional post-machining is detrimental to part geometry and time consuming. In this study, therefore, a paraffin coating and grinding post-machining is newly proposed to improve the surface quality of SL part. The paraffin which has suitable properties for the proposed post-machining is coated all over the part surface. By grinding the only over-coated paraffin based on boundary of the SL part surface, the surface roughness can be improved without any damage on the part. Also, it is verified that SL part finished by the proposed post-machining process can be applied for rapid tooling as pattern through manufacturing silicon rubber molding and casting test.
Polishing processes are widely used in the glass, optical, die and semiconductor industries. Chemical Mechanical Polishing (CMP) especially is becoming one of the most important ULSI processes for the O.25m generation and beyond. CMP is conventionally carried out using abrasive slurry and a polishing pad. But the surface of the pad has irregular pores, so there is non-uniformity of slurry flow and of contact area between wafer and the pad, and glazing occurs on the surface of the pad. This paper introduces the basic concept and fabrication technique of the next generation CMP pad using micro-molding method to obtain uniform protrusions and pores on the pad surface.
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